MG50G6EL1 is a 50A, 450V/600V three-phase bridge power transistor/IGBT module manufactured by Toshiba. It is designed for industrial motor control, AC flux vector drives, and power conversion systems.

Key Specifications

1. Maximum Collector Current (\(I_{C}\)): 50A
2. Collector-Emitter Sustaining Voltage (\(V_{CEO}\)): 450V
3. Absolute Maximum Collector-Emitter Voltage (\(V_{CES}\)): 600V
4. Configuration: 6-Element NPN Silicon Darlington Transistors with built-in free-wheeling diodes
5. Terminal/Pin Count: 15 pins
6. Isolation Voltage: 2.5kV RMS