SEMIKRON
SKKD 81/16
SEMIPACK 1 Rectifier Diode Module
Dual-diode module rated for an average forward current of 82 A
Insulated Gate Bipolar Transistor (IGBT) module
A single-configuration trench-gate IGBT module rated for 600 Volts and 600 Amperes.
The CM600HU-12F is a high-power Insulated Gate Bipolar Transistor (IGBT) module manufactured by Powerex Inc. (in collaboration with Mitsubishi Electric). It is a single-configuration high-power switching device utilizing a Trench Gate design, engineered for high efficiency and low power loss in heavy-duty industrial applications.
Other items in IGBT / Power Modules / Thyristors .
SEMIKRON
SEMIPACK 1 Rectifier Diode Module
Dual-diode module rated for an average forward current of 82 A
TECHSEM
Phase Control Thyristor
Phase Control Thyristor Y30KPE 300А (1100V - 1800V) Techsem Replacement ; Average forward current, IT(AV) (TC, ºC), 600А (70ºC) ; Voltage, VDRM/V · 1100-1800 V.
IXYS
Semiconductors
VVZF70-16IO7 Semiconductors from IXYS 2-Year Warranty - , SILICON CONTROLLED RECTIFIER,
SEMIKRON
Silicon rectifier diode and thyristor modules
Silicon rectifier diode and thyristor modules
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