CM300DY-24NF is a high-power dual IGBT (Insulated Gate Bipolar Transistor) module manufactured by Mitsubishi Electric. It features a half-bridge configuration rated at 1200V (\(V_{CES}\)) and 300 Amps (\(I_{C}\)) designed for fast, efficient switching in industrial applications.

Key Specifications

1. Device Type: Dual IGBT module (Half-Bridge configuration with antiparallel fast diodes)
2. Collector-Emitter Voltage (\(V_{CES}\)): 1200 V
3. Continuous Collector Current (\(I_{C}\)): 300 A
4. Gate-Emitter Voltage (\(V_{GES}\)): ±20 V
5. Max Power Dissipation (\(P_{tot}\)): 1130 W

Operating Junction Temperature (\(T_{j}\)): -40°C to +150°C