CM300DU-12F

Gate bipolar transistor (IGBT) module

A high-power insulated gate bipolar transistor (IGBT) half-bridge module rated for 600V and 300A.

Country of origin
JAPAN

Product Description

CM300DU-12F is a high-power insulated gate bipolar transistor (IGBT) module. It features a dual-element (half-bridge) configuration rated for 300 amperes of continuous collector current and a 600V collector-emitter voltage capacity, designed for general-purpose inverters, motor drives, and servo controls.

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