SEMIKRON
SKKD 81/16
SEMIPACK 1 Rectifier Diode Module
Dual-diode module rated for an average forward current of 82 A
IGBT Power Module
An N-channel IGBT Power Module configured as a dual half-bridge circuit with integrated fast free-wheeling diodes.
BSM200GB120DN2 is an Insulated Gate Bipolar Transistor (IGBT) power module manufactured by Infineon Technologies (formerly Siemens). It features a half-bridge configuration rated for 1200V and 200A, built with fast free-wheeling diodes and an insulated metal baseplate for heavy industrial motor drives and power converters.
Other items in IGBT / Power Modules / Thyristors .
SEMIKRON
SEMIPACK 1 Rectifier Diode Module
Dual-diode module rated for an average forward current of 82 A
TECHSEM
Phase Control Thyristor
Phase Control Thyristor Y30KPE 300А (1100V - 1800V) Techsem Replacement ; Average forward current, IT(AV) (TC, ºC), 600А (70ºC) ; Voltage, VDRM/V · 1100-1800 V.
IXYS
Semiconductors
VVZF70-16IO7 Semiconductors from IXYS 2-Year Warranty - , SILICON CONTROLLED RECTIFIER,
SEMIKRON
Silicon rectifier diode and thyristor modules
Silicon rectifier diode and thyristor modules
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