BSM150GB120DN2

(IGBT) Power Module

A high-performance Insulated Gate Bipolar Transistor (IGBT) power module.

Country of origin
Germany

Product Description

The BSM150GB120DN2 is a high-performance, dual-switch Insulated Gate Bipolar Transistor (IGBT) power module, originally manufactured by Eupec and later supplied by Infineon Technologies. It is primarily designed for demanding industrial applications such as AC inverter drives and power converters.

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