SEMIKRON
SKKD 81/16
SEMIPACK 1 Rectifier Diode Module
Dual-diode module rated for an average forward current of 82 A
(IGBT) Power Module
An IGBT Power Module configured as a half-bridge, including fast free-wheeling diodes.
The BSM100GB120DN2K is a high-performance Insulated Gate Bipolar Transistor (IGBT) power module originally produced by Siemens Semiconductor Group and subsequently manufactured and supported by EUPEC / Infineon Technologies. It features a Half-Bridge configuration with integrated fast free-wheeling diodes housed in an insulated metal base plate package designed for industrial screw-mounting setups.
Other items in IGBT / Power Modules / Thyristors .
SEMIKRON
SEMIPACK 1 Rectifier Diode Module
Dual-diode module rated for an average forward current of 82 A
TECHSEM
Phase Control Thyristor
Phase Control Thyristor Y30KPE 300А (1100V - 1800V) Techsem Replacement ; Average forward current, IT(AV) (TC, ºC), 600А (70ºC) ; Voltage, VDRM/V · 1100-1800 V.
IXYS
Semiconductors
VVZF70-16IO7 Semiconductors from IXYS 2-Year Warranty - , SILICON CONTROLLED RECTIFIER,
SEMIKRON
Silicon rectifier diode and thyristor modules
Silicon rectifier diode and thyristor modules
Send us your specifications and we'll respond within 24 hours.