7MBR50SB120B

IGBT Power Module

A 1200V, 50A IGBT power module made by Fuji Electric.

Country of origin
JAPAN

Product Description

7MBR50SB120B is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) power semiconductor module manufactured by Fuji Electric. It integrates a converter diode bridge, a dynamic brake circuit, and an inverter stage into a compact package designed for motor drives and industrial power supplies.

Related products

Other items in IGBT / Power Modules / Thyristors .

SEMIKRON

SKKD 81/16

SEMIPACK 1 Rectifier Diode Module

Dual-diode module rated for an average forward current of 82 A

TECHSEM

Y30KPE0T12

Phase Control Thyristor

Phase Control Thyristor Y30KPE 300А (1100V - 1800V) Techsem Replacement ; Average forward current, IT(AV) (TC, ºC), 600А (70ºC) ; Voltage, VDRM/V · 1100-1800 V.

IXYS

WZF70-16IO7

Semiconductors

VVZF70-16IO7 Semiconductors from IXYS 2-Year Warranty - , SILICON CONTROLLED RECTIFIER,

Need pricing on 7MBR50SB120B?

Send us your specifications and we'll respond within 24 hours.