SEMIKRON
SKKD 81/16
SEMIPACK 1 Rectifier Diode Module
Dual-diode module rated for an average forward current of 82 A
Insulated-gate bipolar transistor (IGBT) power module
1200V, 200A insulated-gate bipolar transistor (IGBT) power module.
The 2MBI200NB-120 is a high-power Dual IGBT (Insulated Gate Bipolar Transistor) Module manufactured by Fuji Electric. It features a 2-in-1 package configuration designed for high-voltage and high-current industrial power electronics applications, such as half-bridge and chopper circuit topologies.
Other items in IGBT / Power Modules / Thyristors .
SEMIKRON
SEMIPACK 1 Rectifier Diode Module
Dual-diode module rated for an average forward current of 82 A
TECHSEM
Phase Control Thyristor
Phase Control Thyristor Y30KPE 300А (1100V - 1800V) Techsem Replacement ; Average forward current, IT(AV) (TC, ºC), 600А (70ºC) ; Voltage, VDRM/V · 1100-1800 V.
IXYS
Semiconductors
VVZF70-16IO7 Semiconductors from IXYS 2-Year Warranty - , SILICON CONTROLLED RECTIFIER,
SEMIKRON
Silicon rectifier diode and thyristor modules
Silicon rectifier diode and thyristor modules
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