2MBI100NC-120

Dual-IGBT (Insulated Gate Bipolar Transistor)

A 1200V, 100A dual IGBT (Insulated Gate Bipolar Transistor) .

Country of origin
JAPAN

Product Description

The 2MBI100NC-120 is a 1200V, 100A dual-IGBT (Insulated Gate Bipolar Transistor) "2-in-one" power module manufactured by Fuji Electric. It is designed for highly efficient power conversion, heavy-duty switching applications, and motor control.

Related products

Other items in IGBT / Power Modules / Thyristors .

SEMIKRON

SKKD 81/16

SEMIPACK 1 Rectifier Diode Module

Dual-diode module rated for an average forward current of 82 A

TECHSEM

Y30KPE0T12

Phase Control Thyristor

Phase Control Thyristor Y30KPE 300А (1100V - 1800V) Techsem Replacement ; Average forward current, IT(AV) (TC, ºC), 600А (70ºC) ; Voltage, VDRM/V · 1100-1800 V.

IXYS

WZF70-16IO7

Semiconductors

VVZF70-16IO7 Semiconductors from IXYS 2-Year Warranty - , SILICON CONTROLLED RECTIFIER,

Need pricing on 2MBI100NC-120?

Send us your specifications and we'll respond within 24 hours.